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1

Electronics based on two-dimensional materials

Fiori, Gianluca, Bonaccorso, Francesco, Iannaccone, Giuseppe, Palacios, Tomás, Neumaier, Daniel, Seabaugh, Alan, Banerjee, Sanjay K., Colombo, Luigi

Journal:

Nature Nanotechnology

Year:

2014

Language:

english

File:

PDF, 2.00 MB

english, 2014

2

Universal analytic model for tunnel FET circuit simulation

Lu, Hao, Esseni, David, Seabaugh, Alan

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.44 MB

english, 2015

3

Gallium nitride tunneling field-effect transistors exploiting polarization fields

Chaney, Alexander, Turski, Henryk, Nomoto, Kazuki, Hu, Zongyang, Encomendero, Jimy, Rouvimov, Sergei, Orlova, Tatyana, Fay, Patrick, Seabaugh, Alan, Xing, Huili Grace, Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2020

Language:

english

File:

PDF, 1.59 MB

english, 2020

4

Potential nanoelectronic integrated circuit technologies

John Randall, Gary Frazier, Alan Seabaugh, Tom Broekaert

Journal:

Microelectronic Engineering

Year:

1996

Language:

english

File:

PDF, 3.24 MB

english, 1996

5

Fully-depleted Ge interband tunnel transistor: Modeling and junction formation

Qin Zhang, Surajit Sutar, Thomas Kosel, Alan Seabaugh

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 476 KB

english, 2009

6

Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors

Liu, Qingmin, Dong, Lin, Liu, Yiqun, Gordon, Roy, Ye, Peide D., Fay, Patrick, Seabaugh, Alan

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 483 KB

english, 2012

7

[IEEE 2012 IEEE Subthreshold Microelectronics Conference (SubVT) - Waltham, MA, USA (2012.10.9-2012.10.10)] 2012 IEEE Subthreshold Microelectronics Conference (SubVT) - Perspectives of TFETs for low power analog ICs

Senale-Rodriguez, Berardi, Yeqing Lu,, Fay, Patrick, Jena, Debdeep, Seabaugh, Alan, Xing, Huili Grace, Barboni, Leonardo, Silveira, Fernando

Year:

2012

Language:

english

File:

PDF, 628 KB

english, 2012

8

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

Sik Hwang, Wan, Remskar, Maja, Yan, Rusen, Protasenko, Vladimir, Tahy, Kristof, Doo Chae, Soo, Zhao, Pei, Konar, Aniruddha, (Grace) Xing, Huili, Seabaugh, Alan, Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 964 KB

english, 2012

9

Void formation on ultrathin thermal silicon oxide films on the Si(100) surface

Wei, Yi, Wallace, Robert M., Seabaugh, Alan C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 480 KB

english, 1996

10

Solution-Cast Monolayers of Cobalt Crown Ether Phthalocyanine on Highly Ordered Pyrolytic Graphite

Lu, Hao, Kwak, Iljo, Park, Jun Hong, O’Neill, Katie, Furuyama, Taniyuki, Kobayashi, Nagao, Seabaugh, Alan, Kummel, Andrew, Fullerton-Shirey, Susan K.

Journal:

The Journal of Physical Chemistry C

Year:

2015

Language:

english

File:

PDF, 9.64 MB

english, 2015

11

[VLSI Electronics Microstructure Science] Heterostructures and Quantum Devices Volume 24 || Resonant-Tunneling Transistors

SEABAUGH, ALAN C.

Year:

1994

Language:

english

File:

PDF, 3.55 MB

english, 1994

12

[IEEE 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - Portland, OR, USA (2018.10.14-2018.10.17)] 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) - Improvement of Metal-Semiconductor Contact from Schottky to Ohmic by Cu Doping in Transition Metal Dichalcogenide Transistors

Liu, Maomao, Shahi, Simran, Fathipour, Sara, Hwang, Wansik, Remskar, Maja, Seabaugh, Alan, Li, Huamin

Year:

2018

File:

PDF, 7 KB

2018

13

Quantitative, experimentally-validated, model of MoS 2 nanoribbon Schottky field-effect transistors from subthreshold to saturation

Paletti, Paolo, Fathipour, Sara, RemÅ¡kar, Maja, Seabaugh, Alan

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 2.23 MB

2020

14

Preface

Harry Salem, Van Seabaugh, Alan Katz

Journal:

Journal of Applied Toxicology

Year:

1994

Language:

english

File:

PDF, 62 KB

english, 1994

15

Symposium on ocular effects of organophosphate exposure

Harry Salem, Van Seabaugh, Alan Katz

Journal:

Journal of Applied Toxicology

Year:

1994

File:

PDF, 23 KB

1994

16

Evaluating the minimum thickness of gate oxide on silicon using first-principles method

Shaoping Tang, Robert M Wallace, Alan Seabaugh, Dominic King-Smith

Journal:

Applied Surface Science

Year:

1998

Language:

english

File:

PDF, 208 KB

english, 1998

17

The MoS2Nanotubes with Defect-Controlled Electric Properties

Maja Remskar, Ales Mrzel, Marko Virsek, Matjaz Godec, Matthias Krause, Andreas Kolitsch, Amol Singh, Alan Seabaugh

Journal:

Nanoscale Research Letters

Year:

2011

Language:

english

File:

PDF, 919 KB

english, 2011

18

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

Yan, Rusen, Zhang, Qin, Li, Wei, Calizo, Irene, Shen, Tian, Richter, Curt A., Hight-Walker, Angela R., Liang, Xuelei, Seabaugh, Alan, Jena, Debdeep, Grace Xing, Huili, Gundlach, David J., Nguyen, N. V

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 939 KB

english, 2012

19

[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior

Wan Sik Hwang,, Remskar, Maja, Yan, Rusen, Protasenko, Vladimir, Tahy, Kristof, Soo Doo Chae,, Huili Xing,, Seabaugh, Alan, Jena, Debdeep

Year:

2012

Language:

english

File:

PDF, 621 KB

english, 2012

20

Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy

Smita Jha, Xueyan Song, S.E. Babcock, T.F. Kuech, Dane Wheeler, Bin Wu, P. Fay, Alan Seabaugh

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 546 KB

english, 2008

21

Influence of Fe 2 O 3 Nanofiller Shape on the Conductivity and Thermal Properties of Solid Polymer Electrolytes: Nanorods versus Nanospheres

Do, Nhu Suong T., Schaetzl, Dean M., Dey, Barnali, Seabaugh, Alan C., Fullerton-Shirey, Susan K.

Journal:

The Journal of Physical Chemistry C

Year:

2012

Language:

english

File:

PDF, 439 KB

english, 2012

22

Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Sik Hwang, Wan, Remskar, Maja, Yan, Rusen, Kosel, Tom, Kyung Park, Jong, Jin Cho, Byung, Haensch, Wilfried, (Grace) Xing, Huili, Seabaugh, Alan, Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 896 KB

english, 2013

23

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs

Bin Wu,, Wheeler, Dana, Changhyun Yi,, Inho Yoon,, Smita Jha,, Brown, April, Kuech, Thomas, Fay, Patrick, Seabaugh, Alan

Year:

2007

Language:

english

File:

PDF, 642 KB

english, 2007

24

Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene

Hwang, Wan Sik, Tahy, Kristof, Li, Xuesong, Xing, Huili (Grace), Seabaugh, Alan C., Sung, Chun Yung, Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 918 KB

english, 2012

25

Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface

Xu, Kun, Zeng, Caifu, Zhang, Qin, Yan, Rusen, Ye, Peide, Wang, Kang, Seabaugh, Alan C., Xing, Huili Grace, Suehle, John S., Richter, Curt A., Gundlach, David J., Nguyen, N. V.

Journal:

Year:

2013

Language:

english

File:

PDF, 2.13 MB

english, 2013

26

Controlled growth of SiO[sub 2] tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes

Wei, Yi, Wallace, Robert M., Seabaugh, Alan C.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 1.98 MB

english, 1997

27

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

Hwang, Wan Sik, Tahy, Kristof, Zhao, Pei, Nyakiti, Luke O., Wheeler, Virginia D., Myers-Ward, Rachael L., Eddy, Charles R., Kurt Gaskill, D., (Grace) Xing, Huili, Seabaugh, Alan, Jena, Debdeep

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2014

Language:

english

File:

PDF, 1.48 MB

english, 2014

28

Room temperature operation of epitaxially grown Si/Si[sub 0.5]Ge[sub 0.5]/Si resonant interband tunneling diodes

Rommel, Sean L., Dillon, Thomas E., Dashiell, M. W., Feng, H., Kolodzey, J., Berger, Paul R., Thompson, Phillip E., Hobart, Karl D., Lake, Roger, Seabaugh, Alan C., Klimeck, Gerhard, Blanks, Daniel K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 324 KB

english, 1998

29

[IEEE 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) - Berkeley, CA, USA (2013.10.28-2013.10.29)] 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) - Tunnel FETs with tunneling normal to the gate

Xing, Huili Grace, Zhou, Guangle, Li, Mingda, Lu, Yiqing, Li, Rui, Wistey, Mark, Fay, Patrick, Jena, Debdeep, Seabaugh, Alan

Year:

2013

Language:

english

File:

PDF, 223 KB

english, 2013

30

Tunnel Field-Effect Transistors: State-of-the-Art

Lu, Hao, Seabaugh, Alan

Journal:

IEEE Journal of the Electron Devices Society

Year:

2014

Language:

english

File:

PDF, 1.62 MB

english, 2014

31

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Novel logic devices based on 2D crystal semiconductors: Opportunities and challenges

Zhao, Pei, Hwang, Wan-Sik, Kim, Eok Su, Feenstra, Randy, Gu, Gong, Kang, Jiahao, Banerjee, Kaustav, Seabaugh, Alan, Xing, Grace Huili, Jena, Debdeep

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

32

Optimum Bandgap and Supply Voltage in Tunnel FETs

Zhang, Qin, Lu, Yeqing, Richter, Curt A., Jena, Debdeep, Seabaugh, Alan

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.52 MB

english, 2014

33

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

Hwang, Wan Sik, Verma, Amit, Peelaers, Hartwin, Protasenko, Vladimir, Rouvimov, Sergei, (Grace) Xing, Huili, Seabaugh, Alan, Haensch, Wilfried, de Walle, Chris Van, Galazka, Zbigniew, Albrecht, Martin

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.38 MB

english, 2014

34

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Exfoliated MoTe2 field-effect transistor

Fathipour, Sara, Hwang, Wan Sik, Kosel, Thomas, Xing, Huili Grace, Haensch, Wilfried, Jena, Debdeep, Seabaugh, Alan

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

35

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Electrical properties of HfO2/InAs MOS capacitors

Wheeler, Dana, Seabaugh, Alan, Froberg, Linus, Thelander, Claes, Wernersson, Lars-Erik

Year:

2007

Language:

english

File:

PDF, 96 KB

english, 2007

36

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Zhou, Guangle, Lu, Yeqing, Li, Rui, Zhang, Qin, Liu, Qingmin, Vasen, Tim, Zhu, Haijun, Kuo, Jenn-Ming, Kosel, Tom, Wistey, Mark, Fay, Patrick, Seabaugh, Alan, Xing, Huili

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 641 KB

english, 2012

37

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Fundamentals and current status of steep-slope tunnel field-effect transistors

Year:

2011

Language:

english

File:

PDF, 477 KB

english, 2011

38

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor

Fathipour, Sara, Xu, Huilong, Kinder, Erich, Fullerton-Shirey, Susan, Seabaugh, Alan

Year:

2014

Language:

english

File:

PDF, 1.19 MB

english, 2014

39

[IEEE ESSCIRC 2011 - 37th European Solid State Circuits Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the ESSCIRC (ESSCIRC) - Fundamentals and current status of steep-slope tunnel field-effect transistors

Year:

2011

Language:

english

File:

PDF, 658 KB

english, 2011

40

[IEEE 2008 66th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2008.06.23-2008.06.25)] 2008 Device Research Conference - Can the Interband Tunnel FET Outperform Si CMOS?

Zhang, Qin, Seabaugh, Alan

Year:

2008

Language:

english

File:

PDF, 2.05 MB

english, 2008

41

The Tunneling Transistor

Journal:

Year:

2013

Language:

english

File:

PDF, 4.69 MB

english, 2013

42

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy

Zhang, Qin, Zhou, Guangle, Xing, Huili G., Seabaugh, Alan C., Xu, Kun, Kirillov, Oleg A., Richter, Curt A., Nguyen, Nhan V.

Year:

2011

Language:

english

File:

PDF, 473 KB

english, 2011

43

[IEEE 2008 66th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2008.06.23-2008.06.25)] 2008 Device Research Conference - Structural Sensitivity of Interband Tunnel Diodes for SRAM

Sutar, Surajit, Zhang, Qin, Seabaugh, Alan

Year:

2008

Language:

english

File:

PDF, 1.04 MB

english, 2008

44

[IEEE 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Stockholm, Sweden (2014.04.7-2014.04.9)] 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Continuous semiempirical model for the current-voltage characteristics of tunnel fets

Lu, Hao, Kim, Jung Whan, Esseni, David, Seabaugh, Alan

Year:

2014

Language:

english

File:

PDF, 987 KB

english, 2014

45

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Rapid melt growth of Ge tunnel junctions for interband tunnel transistors

Qin Zhang,, Sutar, Surajit, Kosel, Thomas, Seabaugh, Alan

Year:

2007

Language:

english

File:

PDF, 293 KB

english, 2007

46

[IEEE 2009 IEEE International Conference on IC Design and Technology (ICICDT) - Austin, TX, USA (2009.05.18-2009.05.20)] 2009 IEEE International Conference on IC Design and Technology - One-transistor bistable-body tunnel SRAM

Karda, Kamal, Brockman, Jay, Sutar, Surajit, Seabaugh, Alan, Nahas, Joseph

Year:

2009

Language:

english

File:

PDF, 1.30 MB

english, 2009

47

Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy

Zhang, Qin, Zhou, Guangle, Xing, Huili G., Seabaugh, Alan C., Xu, Kun, Sio, Hong, Kirillov, Oleg A., Richter, Curt A., Nguyen, N. V.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.22 MB

english, 2012

48

Erratum: Electronics based on two-dimensional materials

Fiori, Gianluca, Bonaccorso, Francesco, Iannaccone, Giuseppe, Palacios, Tomás, Neumaier, Daniel, Seabaugh, Alan, Banerjee, Sanjay K., Colombo, Luigi

Journal:

Nature Nanotechnology

Year:

2014

File:

PDF, 518 KB

2014

49

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Vertical heterojunction of MoS2 and WSe2

Xiao, Shudong, Li, Mingda, Seabaugh, Alan, Jena, Debjeep, Xing, Huili Grace

Year:

2014

File:

PDF, 254 KB

2014

50

Publisher's Note: “High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)]

Hwang, Wan Sik, Verma, Amit, Peelaers, Hartwin, Protasenko, Vladimir, Rouvimov, Sergei, Xing, Huili (Grace), Seabaugh, Alan, Haensch, Wilfried, Walle, Chris Van de, Galazka, Zbigniew, Albrecht, Martin

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 303 KB

english, 2014

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